| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6428 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 46 K |
| 2N6428A | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 46 K |
| 2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
| 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 69 K |
| 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
| FQB2N60 | 600V N-Channel MOSFET, 2.4A | Fairchild-Semiconductor | D2PAK | 3 | -55°C | 150°C | 580 K |
| FQI2N60 | 600V N-Channel MOSFET, 2.4A | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 580 K |
| GMG112N60FF | 1200 V single-phase rectifier bridge | distributor | - | - | - | - | 159 K |
| GMG112N60FS | 1200 V single-phase rectifier bridge | distributor | - | - | - | - | 159 K |
| GMG112N60LL | 1200 V single-phase rectifier bridge | distributor | - | - | - | - | 159 K |
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