| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6107 | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| 2N6292 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| 2N6504 | Thyristor, 50V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6505 | Thyristor, 100V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6507 | Thyristor, 400V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6508 | Thyristor, 600V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6509 | Thyristor, 800V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
| 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
| 2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 109 K |
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