| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6515 | Ic=500mA, Vce=10V transistor | distributor | - | - | - | - | 427 K |
| H2N6426 | 500mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 35 K |
| H2N6427 | 500mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 35 K |
| H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 41 K |
| H2N6520 | 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 36 K |
| H2N6668 | 10A PNP epitaxial planar transistor for general purpose amplifier and switching applications | distributor | TO220AB | 3 | - | - | 34 K |
| H2N6718L | 2A 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching applications | distributor | - | 3 | - | - | 42 K |
| H2N6718V | 1A NPN epitaxial planar transistor for general purpose medium power amplifier and switching | distributor | - | 3 | - | - | 39 K |
| SSP2N60B | 600V, 2A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 856 K |
| SSS2N60B | 600V, 2A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 856 K |
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