| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6071A | Bidirectional thyristor, 4 Ampere, 200V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6071B | Bidirectional thyristor, 4 Ampere, 200V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6073A | Bidirectional thyristor, 4 Ampere, 400V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6073B | Bidirectional thyristor, 4 Ampere, 400V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6075A | Bidirectional thyristor, 4 Ampere, 600V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6075B | Bidirectional thyristor, 4 Ampere, 600V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6075B | Bidirectional thyristor, 4 Ampere, 600V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6075B | Bidirectional thyristor, 4 Ampere, 600V | ON-Semiconductor | - | 3 | -40°C | 110°C | 119 K |
| 2N6427 | 40 V, NPN darlington transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
| PHB2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHD2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHP2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
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