| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6034 | PNP medium power darlington transistor, 4A , 40V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6035 | PNP medium power darlington transistor, 4A , 60V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6036 | PNP medium power darlington transistor, 4A , 80V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6037 | NPN medium power darlington transistor, 4A , 40V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6038 | NPN medium power darlington transistor, 4A , 60V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6039 | NPN medium power darlington transistor, 4A , 80V | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 174 K |
| 2N6344 | Silicon bidirectional thyristors, 8A, 600V | ON-Semiconductor | - | 3 | -40°C | 125°C | 87 K |
| 2N6349 | Silicon bidirectional thyristors, 8A, 800V | ON-Semiconductor | - | 3 | -40°C | 125°C | 87 K |
| PHX2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
| PHX2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
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