| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM29F002NB-55PC | 2 megabit CMOS 5.0 volt-only boot sector flash memory | AMD-Advanced-Micro-Devices | PDIP | 32 | 0°C | 70°C | 436 K |
| OPA642NB/250 | Wideband Low Distortion Operational Amplifier | Burr-Brown-Corporation | 5 | - | 0°C | 75°C | 243 K |
| OPA642NB/3K | Wideband Low Distortion Operational Amplifier | Burr-Brown-Corporation | 5 | - | 0°C | 75°C | 243 K |
| STD2NB25 | N-CHANNEL 250V - 1.7 OHM - 2A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 274 K |
| STD2NB40 | N-CHANNEL 400V - 3.5 OHM - 2A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
| STD2NB60 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STD2NB60 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STD2NB80 | N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| STGW12NB60H | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STGW12NB60HD | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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