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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EN-12S12Input voltage 12 VDC;output voltage 12 VDC;output current:830 mA; 6-24 W non-isolation DC to DC converterdistributorDIP24-25°C71°C65 K
HDD60-12S12-P60 W DC/DC converter,input voltage 9-18 V, output voltage 12 V, output current 5000 mAdistributor-14-25°C71°C191 K
HDD60-12S12-T60 W DC/DC converter,input voltage 9-18 V, output voltage 12 V, output current 5000 mAdistributor-14-25°C71°C191 K
M2S12D20TP-10512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D20TP-10L512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D20TP-75512M double data rate SDRAM, 128M x 4 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D20TP-75L512M double data rate SDRAM, 128M x 4 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10L512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-10L512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-75512M double data rate SDRAM, 64M x 8 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
M2S12D30TP-75L512M double data rate SDRAM, 64M x 8 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C754 K
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