Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SB1115 | 60 V, 2 A, 2 W silicon transistor | distributor | - | 3 | - | - | 228 K |
2SB1115A | 80 V, 2 A, 2 W silicon transistor | distributor | - | 3 | - | - | 228 K |
2SB1116 | Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. | distributor | - | 3 | 0°C | 150°C | 143 K |
2SB1116A | Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. | distributor | - | 3 | 0°C | 150°C | 143 K |
2SB1133 | PNP epitaxial silicon transistor. Power amplifier vertical deflection output | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
2SB1181 | PNP silicon power transistor | ROHM | - | 3 | - | - | 80 K |
2SB1184 | PNP power transistor, 60V, 3A | ROHM | CPT3 | 3 | -55°C | 150°C | 129 K |
2SB1185 | PNP power transistor, 60V, 3A | ROHM | - | 3 | -55°C | 150°C | 129 K |
2SB1189 | 80V, 0.7A medium power transistor | ROHM | - | 3 | - | - | 52 K |
2SB1198K | PNP silicon low frequency transistor | ROHM | - | 3 | - | - | 93 K |
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