| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB624-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 256 K |
| 2SB624-T1B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 256 K |
| 2SB624-T2B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 256 K |
| 2SB633 | 6Ampere PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 125 K |
| 2SB633 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| 2SB688 | 8Ampere high-power PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 114 K |
| D2SB60 | General purpose SIL bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 2S | - | - | - | 272 K |
| D2SB60A | General purpose SIL bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 2S | - | - | - | 299 K |
| D2SB60L | General purpose SIL bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 2S | - | - | - | 318 K |
| LN2SB60 | General purpose low noise bridge rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 2S | - | - | - | 303 K |
| [1] 2 [3] |
|---|
