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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC900Transistor. Low frequency, low noise amplifier . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA.distributor-30°C150°C112 K
2SC9011Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 30mA.distributor-30°C150°C77 K
2SC9013Transistor. 1W output amplifier of potable radios in class B push-pull operation. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = 600mA.distributor-30°C150°C81 K
2SC9014Transistors, pre-amplifier, low lewel & low noice, 50V, 100mA, 450mWdistributor-3-55°C150°C75 K
2SC9016Transistor. AM converter, FM/RF amplifier of low noise. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 25mA.distributor-30°C150°C81 K
2SC9018Transistor. AM/FM IF amplifier, local oscillator of FM/VNF tuner. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 15V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 50mA.distributor-30°C150°C73 K
2SC908NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-3--125 K
2SC945250mW NPN silicon planar epitaxial transistordistributor-3-55°C125°C70 K
2SC945NPN transistor for use in driver stage of AF amplifier and low speed switchingNEC-Electronics-Inc--3-55°C125°C281 K
UTC2SC945NPN epitaxial silicon transistordistributor-3--58 K
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