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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AP2012SF4CIn ra-red emitting diode. 2.0 x 1.2mm SMT LED. Peak wavelength 880 nm. Lens type water clear.distributor-2-40°C85°C126 K
APT8052SFLL800V, 15A power MOS 7 transistorAdvanced-Power-Technology-APTD3PAK3-55°C150°C71 K
HAL502SF-AHall effect sensor (62 kHz)Micronas-Intermetall-3-40°C170°C321 K
HAL502SF-EHall effect sensor (62 kHz)Micronas-Intermetall-3-40°C100°C321 K
HAL502SF-KHall effect sensor (62 kHz)Micronas-Intermetall-3-40°C140°C321 K
HN58X2402SFPITwo-wire serial interface 2K EEPROM (256-word x 8-bit), operating voltage 1.8V to 5.5V, 400kHzdistributorplastic SOP8-40°C85°C62 K
M30622SFPSingle-chip 16-bit CMOS microcomputer. RAM 3K bytesMitsubishi-Electric-Corporation-Semiconductor-GroupPlastic QFP100-20°C85°C3 M
M38002SFPSingle-chip 8-bit microcfomputer. External ROM type. RAM 640 bytesMitsubishi-Electric-Corporation-Semiconductor-GroupPlastic QFP64-20°C85°C4 M
P80C32SFAA80C51 8-bit microcontroller family 8K-64K 256-1K OTP ROM ROMless, low voltage (2.7 V - 5.5 V), low power and high speed (33 MHz)Philips-SemiconductorsSOT187---337 K
P87C52SFBB80C51 8-bit microcontroller family 8K-64K 256-1K OTP ROM ROMless, low voltage (2.7 V - 5.5 V), low power and high speed (33 MHz)Philips-SemiconductorsSOT307---337 K
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