| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ272 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 81 K |
| 2SJ273 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063A | 3 | - | - | 82 K |
| 2SJ274 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 82 K |
| 2SJ275 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2090 | 3 | - | - | 88 K |
| 2SJ276 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2090A | 3 | - | - | 85 K |
| 2SJ277 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2090 | 3 | - | - | 88 K |
| 2SJ281 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2092A | 3 | - | - | 83 K |
| 2SJ48 | Silicon P-channel MOSFET low frequency power amplifier (-120V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| 2SJ49 | Silicon P-channel MOSFET low frequency power amplifier (-140V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| 2SJ50 | Silicon P-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage) | distributor | - | 3 | -55°C | 150°C | 107 K |
| << [6] [7] [8] [9] [10] 11 [12] [13] [14] [15] [16] >> |
|---|
