| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BZT52-C2V7S | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 2.7 V | distributor | - | 2 | -55°C | 150°C | 78 K |
| BZX55C2V7RL | 500 milliwatts glass silicon zener diode, zener voltage 2.7V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| BZX79C2V7RL | 500 milliwatts glass silicon zener diode, zener voltage 2.7V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| BZX84C2V7W | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 2.7 V | distributor | - | 2 | -55°C | 150°C | 79 K |
| MGFC42V7785A | 7.7-8.5GHz band 16W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 104 K |
| MH32V7245BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 138 K |
| MH32V7245BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
| MH32V7245BST-6 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 138 K |
| MH32V725BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| MH32V725BST-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| [1] 2 [3] [4] |
|---|
