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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GS8162Z36B-133133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAMdistributorBGA1190°C70°C901 K
MA2Z365Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----42 K
MA2Z366Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----42 K
MA2Z367Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----40 K
MA2Z368Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----39 K
MA2Z371Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----42 K
MA2Z372Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----42 K
MA2Z374Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----42 K
MA2Z376Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----39 K
MA2Z377Silicon epitaxial planer type variable capacitance diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----38 K
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