Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N3008 | 200 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
2N3019 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | - | - | 144 K |
2N3020 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | - | - | 144 K |
2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
IXFH52N30Q | 300V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 70 K |
IXFK52N30Q | 300V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 70 K |
IXFT52N30Q | 300V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 70 K |
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