| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3903 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 72 K |
| 2N3904 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 71 K |
| 2N3905 | 350mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 112 K |
| 2N3905 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
| 2N3906 | 350mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 112 K |
| 2N3906 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
| 2N3960 | Chip: geometry 0003; polarity NPN | distributor | - | - | - | - | 29 K |
| 2N3960UB | Chip: geometry 0003; polarity NPN | distributor | - | - | - | - | 29 K |
| 2N3962 | 360mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 43 K |
| 2N3998 | Chip: geometry 9201; polarity NPN | distributor | - | - | - | - | 33 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
