| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTA32N60E2 | 32A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 31 K |
| HGTG32N60E2 | 32A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 33 K |
| MTB2N60E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 271 K |
| MTP2N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 219 K |
| PHB2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHD2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHP2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHP2N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 94 K |
| PHX2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
| PHX2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 65 K |
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