| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6507 | Thyristor, 400V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
| 2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
| 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 69 K |
| 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
| 2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
| 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
| 2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 109 K |
| 2N6520 | PNP silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6520 | PNP silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6547 | Transistor polarity NPN Voltage Vce sat max 5 V Voltage Vceo 400 V Current Ic @ Vce sat 15 A Time fall @ Ic 0.7 ?s Current Ic av. 15 A Power Ptot 175 W Voltage Vces 850 V | SGS-Thomson-Microelectronics | - | - | - | - | 78 K |
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