Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N7000 | N-channel enchancement mode vertical D-MOS transistor. | Philips-Semiconductors | - | 3 | 0°C | 150°C | 77 K |
2N7000 | 60 V, N-channel-enhancement | distributor | - | 3 | -55°C | 150°C | 288 K |
2N7000 | N-channel 60-V (D-S) MOSFET | distributor | - | 3 | -55°C | 150°C | 51 K |
2N7002 | N-channel vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 76 K |
2N7002 | N-channel 60-V (D-S) MOSFET | distributor | - | 3 | -55°C | 150°C | 51 K |
2N7002E | 60V; 0.25A; N-channel enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 354 K |
2N7051 | NPN Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 27 K |
H2N7000 | 200mA N-channel enchancement mode transistor for high voltage, high speed applications such as switching regulators, converters | distributor | - | 3 | - | - | 41 K |
H2N7002 | 60V N-channel transistor | distributor | SOT23 | 3 | - | - | 65 K |
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