| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2411K | NPN silicon medium power transistor | ROHM | - | 3 | - | - | 74 K |
| 2SC3969 | NPN silicon high-voltage switching transistor | ROHM | - | 3 | - | - | 120 K |
| 2SC4097 | NPN silicon medium power transistor | ROHM | - | 3 | - | - | 74 K |
| 2SC4115S | NPN silicon low frequency transistor | ROHM | - | 3 | - | - | 108 K |
| 2SC4150 | Low-saturation high-speed voltage switching bipolar transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 396 K |
| 2SC4151 | Low-saturation high-speed voltage switching bipolar transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 403 K |
| 2SC4876 | Low-saturation high-speed voltage switching bipolar transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 491 K |
| 2SC5161 | NPN silicon high-voltage switching transistor | ROHM | - | 3 | - | - | 120 K |
| 2SC5256 | Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications | Toshiba | - | 3 | - | - | 160 K |
| 2SC5258 | Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications | Toshiba | - | 4 | - | - | 100 K |
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