| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC1008 | Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | distributor | - | 3 | 0°C | 150°C | 73 K |
| 2SC1009 | High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | distributor | - | 3 | 0°C | 150°C | 72 K |
| 2SC2752 | NPN transistor for low power switching regulator, DC-DC converter and high voltage switch | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 188 K |
| 2SC2785 | NPN transistor is designed for use in driver stage of AF amplifier and speed switching | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 281 K |
| 2SC3355 | NPN transistor for low noise amplifier at VHF, UHF and CATV band. | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 90 K |
| 2SC3356 | NPN transistor for low noise amplifier at VHF, UHF and CATV band | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 91 K |
| 2SC3404 | NPN RF power transistor | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -55°C | 175°C | 150 K |
| 2SC3616 | NPN transistor for general-purpose applications requiring high DC current gain | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 168 K |
| 2SC3622 | NPN transistor for general-purpose applications requiring high DC current gain | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 163 K |
| 2SC9014 | Transistors, pre-amplifier, low lewel & low noice, 50V, 100mA, 450mW | distributor | - | 3 | -55°C | 150°C | 75 K |
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