| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2682 | NPN power transistor, 180V, 0.1A | NEC-Electronics-Inc- | - | 3 | -55°C | 125°C | 64 K |
| 2SC3218-M | NPN power transistor for 860-MHz wideband power amplifier, 55V, 15A | NEC-Electronics-Inc- | - | 5 | -65°C | 150°C | 121 K |
| 2SC380TM | NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-O
| NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-R
| NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-Y | NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC4083 | High-frequency amplifier transistor (11V, 50mA, 3.2GHz) | ROHM | UMT3 | 3 | -55°C | 150°C | 64 K |
| 2SC4726 | High-frequency amplifier transistor (11V, 50mA, 3.2GHz) | ROHM | EMT3 | 3 | -55°C | 150°C | 64 K |
| 2SC829 | Silicon NPN epitaxial planer type | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | | - | - | 55 K |
| << [182] [183] [184] [185] [186] 187 |
|---|
