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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC1615NPN transistor for high gain amplifier, 210V 30mAROHMFTR3-55°C125°C207 K
2SC16261.5W NPN silicon transistordistributor-3-55°C150°C112 K
2SC1653-T1BSilicon transistorNEC-Electronics-Inc-----163 K
2SC1653-T2BSilicon transistorNEC-Electronics-Inc-----163 K
2SC1654-LSilicon transistorNEC-Electronics-Inc-----163 K
2SC1654-T1BSilicon transistorNEC-Electronics-Inc-----163 K
2SC1654-T2BSilicon transistorNEC-Electronics-Inc-----163 K
2SC1674TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA.distributor-30°C150°C173 K
2SC1675250mW NPN silicon transistordistributor-3-55°C150°C77 K
2SC1675FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA.distributor-30°C150°C85 K
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