| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC1946A | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 135 K |
| 2SC1966 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 125 K |
| 2SC1967 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 205 K |
| 2SC1968 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 129 K |
| 2SC1969 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | - | - | 145 K |
| 2SC1970 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | - | - | 154 K |
| 2SC1971 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | - | - | 127 K |
| 2SC1972 | NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 175°C | 130 K |
| 2SC1972 | NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 175°C | 130 K |
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