| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3218-M | NPN power transistor for 860-MHz wideband power amplifier, 55V, 15A | NEC-Electronics-Inc- | - | 5 | -65°C | 150°C | 121 K |
| 2SC3355 | NPN transistor for low noise amplifier at VHF, UHF and CATV band. | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 90 K |
| 2SC3356 | NPN transistor for low noise amplifier at VHF, UHF and CATV band | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 91 K |
| 2SC3404 | NPN RF power transistor | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -55°C | 175°C | 150 K |
| 2SC3568 | NPN power transistor for switching regulator, DC-DC converter and high frequency power amplifier, 100V, 10A | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 172 K |
| 2SC3622 | NPN transistor for general-purpose applications requiring high DC current gain | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 163 K |
| 2SC380TM | NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-R
| NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC3838K | High-frequency amplifier transistor (11V, 50mA, 3.2GHz) | ROHM | SMT3 | 3 | -55°C | 150°C | 64 K |
| 2SC388 | Transistor. TV final picture IF amplifier applications . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 300mW. Collector current Ic = 50mA. | distributor | - | 3 | 0°C | 150°C | 82 K |
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