| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1022 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 406 K |
| 2SD1023 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 445 K |
| 2SD1024 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 447 K |
| 2SD1025 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 540 K |
| 2SD1026 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 429 K |
| 2SD1027 | Low-speed switching Darlington transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 458 K |
| 2SD1047 | 12Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 130 K |
| 2SD1055 | NPN silicon medium power transistor | ROHM | FTR | 3 | - | - | 124 K |
| 2SD1062 | 12Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 123 K |
| MA2SD10 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
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