Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GAL22V10B-20LJI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
GAL22V10B-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
GAL22V10B-25LPI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
GAL22V10D-20LJI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
GAL22V10D-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
PALCE22V10H-15JI/4 | EE CMOS versatile PAL device, half power, 15ns | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 691 K |
PALCE22V10H-15PC/4 | EE CMOS versatile PAL device, half power, 15ns | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 70°C | 691 K |
PALCE22V10H-15PI/4 | EE CMOS versatile PAL device, half power, 15ns | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 691 K |
PALCE22V10Q-10JC/5 | EE CMOS versatile PAL device, quarter power, 10ns | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 70°C | 691 K |
PALCE22V10Q-10PC/5 | EE CMOS versatile PAL device, quarter power, 10ns | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 70°C | 691 K |
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