| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM83135-030 | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| ESM2030DV | NPN DARLINGTON POWER MODULE | SGS-Thomson-Microelectronics | - | - | - | - | 116 K |
| ESM3030DV | NPN DARLINGTON POWER MODULE | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STB40NE03L-20 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 101 K |
| STB60N03L-10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| STB60NE03L-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 99 K |
| STP40N03L-20 | N-CHANNLE ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
| STP40NE03L-20 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STP80N03L-06 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
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