| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HFA3524 | 2.5GHz/600MHz Dual Frequency Synthesizer | Intersil-Corporation | - | - | - | - | 172 K |
| HFA3624 | 2.4GHz Up/Down Converter | Intersil-Corporation | - | - | - | - | 186 K |
| HFA3724 | 400MHz Quadrature IF Modulator/Demodulator | Intersil-Corporation | - | - | - | - | 186 K |
| HGT1S14N36G3VLS | 360V, 14A Ignition IGBT | Intersil-Corporation | - | - | - | - | 110 K |
| HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 99 K |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 116 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| RFD16N03LSM | 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 107 K |
| RFD3055LE | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 86 K |
| RFD3055LESM | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 86 K |
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