Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CA3080 | 2MHz, Operational Transconductance Amplifier | Intersil-Corporation | - | - | - | - | 880 K |
CA3080A | 2MHz, Operational Transconductance Amplifier | Intersil-Corporation | - | - | - | - | 880 K |
FSYE13A0D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
FSYE13A0R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
FSYE23A0D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
FSYE23A0R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
FSYE913A0D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
FSYE913A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
HUF76413D3S | 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 105 K |
HUF76413D3S | 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 105 K |
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