| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSYC360D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 77 K |
| FSYC360R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 77 K |
| FSYE923A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 70 K |
| HUF75631SK8 | 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 356 K |
| HUF75831SK8 | 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 182 K |
| HUF76132SK8 | 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 123 K |
| HUF76443S3S | 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 336 K |
| HWB3163-EVAL | PRISM II | Intersil-Corporation | - | - | - | - | 127 K |
| ITF86130SK8T | 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET | Intersil-Corporation | - | - | - | - | 170 K |
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