| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDC637AN | Single N-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 240 K |
| FDD3570 | 80V N-Channel PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 219 K |
| FDD3670 | 100V N-Channel PowerTrench® MOSFET [Advanced] | Fairchild-Semiconductor | - | - | - | - | 167 K |
| FDD6030BL | N-Channel PowerTrench® MOSFET [Advanced] | Fairchild-Semiconductor | - | - | - | - | 107 K |
| FDG312P | P-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | - | - | - | - | 206 K |
| FDG313N | Digital FET N-Channel [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 713 K |
| FDG6301N | Dual N-Channel Digital FET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 226 K |
| FDG6302P | Dual P-Channel Digital FET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 302 K |
| FDG6303N | Dual N-Channel Digital FET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 226 K |
| FDG6304P | Dual P-Channel Digital FET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 227 K |
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