Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MA3D752A | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
MA3D755 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
MA3D756 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
MA3D760 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
MA3D761 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
MA3D798 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
MA3D799 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
MA3G751 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
MA3G751A | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
MA3G762 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
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