| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-119TR-3000 | Frequency 1.8-2.5 GHz, 40dB, 2.25V voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -40°C | 85°C | 135 K |
| AT-267TR-3000 | DC-2 GHz, 15 dB step, 1-Bit digital attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -40°C | 85°C | 81 K |
| MA43000 | 85-105 V, 0.333/2 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA43002 | 45-70 V, 2/6 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA43004 | 30-45 V, 3.3/13 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA4P4300B | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MA4P4300F | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MAAPSM0008TR-3000 | 5-6 GHz,1 Watt power amplifier | M-A-COM---manufacturer-of-RF | - | 16 | -40°C | 70°C | 220 K |
| PH1214-300M | 1200-1400 MHz,300 W, 150 ms pulse,radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 248 K |
| SW-438TR-3000 | Dc-3 GHz, GaAs SPDT high switch | M-A-COM---manufacturer-of-RF | SOT | 6 | - | - | 84 K |
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