Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BAV3004W | 350V; 225mA surface mount low leakage diode. Ideally suited for automatic insertion | distributor | - | 2 | -65°C | 150°C | 61 K |
HI13003 | Emitter to base voltage:9V 1.5A NPN epitaxial planar transistor for high-voltage, high-speed power switching inductive circuit where fall time is critical | distributor | - | 3 | - | - | 34 K |
HMJE13003 | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 38 K |
HMJE13003D | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 44 K |
HMJE13003T | Emitter to base voltage:8V; 1A NPN epitaxial planar transistor for high voltage | distributor | - | 3 | - | - | 38 K |
HMJE13005 | Emitter to base voltage:9V; 4A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 41 K |
HMJE13007 | Emitter to base voltage:9V; 8A NPN epitaxial planar transistor | distributor | - | 3 | - | - | 39 K |
HSA1300D | Emitter to base voltage:6V 2A PNP epitaxial planar transistor | distributor | - | 3 | - | - | 34 K |
L3000SX | Subscriber line interface kit | SGS-Thomson-Microelectronics | PowerSO | 20 | 0°C | 70°C | 281 K |
TB2300M | 190V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
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