| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CY7C1316V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1318V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-300BZC | 18-Mb DDR-II SRAM two-word burst architecture, 300MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| FM2G300US60 | IGBT | Fairchild-Semiconductor | - | - | - | - | 696 K |
| FMBL1G300US60 | IGBT | Fairchild-Semiconductor | - | - | - | - | 693 K |
| FYAF3004DN | SCHOTTKY BARRIER RECTIFIER | Fairchild-Semiconductor | - | - | - | - | 133 K |
| LV23000M | Single-Chip Tuner IC for Radio/Cassette Players | SANYO-Electric-Co--Ltd- | - | - | - | - | 144 K |
| MJE13003 | Switching Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 394 K |
| VP0300B | P-channel enhancement-mode MOSFET, 1.25A, 30V | distributor | - | 3 | -55°C | 150°C | 250 K |
| VP0300L | P-channel enhancement-mode MOSFET, 0.32A, 30V | distributor | - | 3 | -55°C | 150°C | 250 K |
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