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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N3019140 V, NPN medium power transistorPhilips-SemiconductorsTO3-65°C150°C51 K
PBYR30100PT100 V, rectifier diode schottky barrierPhilips-SemiconductorsSOT3--31 K
QL3012-0PF144M12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-55°C125°C347 K
QL3012-1PF144M12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-55°C125°C347 K
QL3012-2PF144I12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-40°C85°C347 K
QL3012-2PF144M12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-55°C125°C347 K
QL3012-3PF144I12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-40°C85°C347 K
QL3012-3PF144M12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-55°C125°C347 K
QL3012-4PF144I12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-40°C85°C347 K
QL3012-4PF144M12,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.distributorTQFP144-55°C125°C347 K
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