| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD8302ARU | 5.5V; LF-2.7GHz FR/IF gain and phase detector. For RF/IF PA linearization, precise RF power control | Analog-Devices | TSSOP | 14 | -40°C | 85°C | 533 K |
| AD8302ARU-REEL | 5.5V; LF-2.7GHz FR/IF gain and phase detector. For RF/IF PA linearization, precise RF power control | Analog-Devices | TSSOP | 14 | -40°C | 85°C | 533 K |
| ADP3302AR2 | OutputV: 3.2V; high precision anyCAP dual low dropout linear regulator. For cellular telephones; notebook, palmtop computers; battery powered systems and portable instruments | Analog-Devices | SOIC | 8 | 0°C | 70°C | 282 K |
| ADP3302AR3 | OutputV: 3.3V; high precision anyCAP dual low dropout linear regulator. For cellular telephones; notebook, palmtop computers; battery powered systems and portable instruments | Analog-Devices | SOIC | 8 | 0°C | 70°C | 282 K |
| ADP3302AR4 | OutputV: 3.3V; high precision anyCAP dual low dropout linear regulator. For cellular telephones; notebook, palmtop computers; battery powered systems and portable instruments | Analog-Devices | SOIC | 8 | 0°C | 70°C | 282 K |
| ADP3302AR5 | OutputV: 5.0V; high precision anyCAP dual low dropout linear regulator. For cellular telephones; notebook, palmtop computers; battery powered systems and portable instruments | Analog-Devices | SOIC | 8 | 0°C | 70°C | 282 K |
| BUJ302A | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 19 K |
| BUJ302AX | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 21 K |
| KV2302A | VHF hyperabrupt tuning varactor | distributor | - | 2 | - | - | 304 K |
| V302AS42 | High energy metal-oxide arrester block. Rated voltage (RMS) 3.0 kV, reference current 5.0 mA. | distributor | - | 2 | 0°C | 60°C | 184 K |
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