| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSN304A | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | - | 3 | 0°C | 150°C | 89 K |
| BSP304A | P-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | - | 3 | 0°C | 150°C | 76 K |
| FJN3304R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 65 K |
| FJN4304R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 65 K |
| ISL9N304AP3 | N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm | Fairchild-Semiconductor | - | - | - | - | 195 K |
| ISL9N304AS3ST | N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm | Fairchild-Semiconductor | - | - | - | - | 195 K |
| ISL9V3040D3S | EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBT | Fairchild-Semiconductor | - | - | - | - | 196 K |
| ISL9V3040P3 | EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBT | Fairchild-Semiconductor | - | - | - | - | 196 K |
| ISL9V3040S3S | EcoSPARK TM 300mJ, 400V, N-Channel Ignition IGBT | Fairchild-Semiconductor | - | - | - | - | 196 K |
| PBYR3040WT | Rectifier diode. Schottky barrier. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 44 K |
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