Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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A62S6308G-10S | 100ns; operating current:40mA;standby current:15uA 64K x 8bit low voltage CMOS SRAM | distributor | BGA | 36 | 0°C | 70°C | 345 K |
A62S6308G-10SI | 100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM | distributor | BGA | 36 | 0°C | 70°C | 345 K |
A62S6308G-70S | 70ns; operating current:40mA;standby current:15uA 64K x 8bit low voltage CMOS SRAM | distributor | BGA | 32 | 0°C | 70°C | 345 K |
A62S6308G-70SI | 70ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAM | distributor | BGA | 32 | 0°C | 70°C | 345 K |
HER308G | 1000 V, 3 A, High efficiency glass passivated rectifier | distributor | DO | 2 | -65°C | 150°C | 64 K |
HER308G | 1000 V, 3 A, high efficiency GPP diode | distributor | DO | 2 | - | - | 64 K |
KBPC308G | 800V, 3.0A glass passivated bridge rectifier | distributor | - | 4 | -55°C | 150°C | 34 K |
KBPC308G | 800V, 3.0A glass passivated bridge rectifier | distributor | - | 4 | -55°C | 150°C | 34 K |
UF308G | Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 3.0 A. | distributor | - | 2 | -55°C | 150°C | 68 K |
UF308G | Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 3.0 A. | distributor | - | 2 | -55°C | 150°C | 68 K |
UF308G | 800 V, 3 A, glass passivated junction ultrafast switching rectifier | distributor | DO | 2 | -55°C | 150°C | 157 K |
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