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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A62S6308G-10S100ns; operating current:40mA;standby current:15uA 64K x 8bit low voltage CMOS SRAMdistributorBGA360°C70°C345 K
A62S6308G-10SI100ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAMdistributorBGA360°C70°C345 K
A62S6308G-70S70ns; operating current:40mA;standby current:15uA 64K x 8bit low voltage CMOS SRAMdistributorBGA320°C70°C345 K
A62S6308G-70SI70ns; operating current:40mA;standby current:30uA 64K x 8bit low voltage CMOS SRAMdistributorBGA320°C70°C345 K
HER308G1000 V, 3 A, High efficiency glass passivated rectifierdistributorDO2-65°C150°C64 K
HER308G1000 V, 3 A, high efficiency GPP diodedistributorDO2--64 K
KBPC308G800V, 3.0A glass passivated bridge rectifierdistributor-4-55°C150°C34 K
KBPC308G800V, 3.0A glass passivated bridge rectifierdistributor-4-55°C150°C34 K
UF308GGlass passivated junction ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 3.0 A.distributor-2-55°C150°C68 K
UF308GGlass passivated junction ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 3.0 A.distributor-2-55°C150°C68 K
UF308G800 V, 3 A, glass passivated junction ultrafast switching rectifierdistributorDO2-55°C150°C157 K
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