| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FS30ASH-06 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30ASJ-03 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30ASJ-06 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
| KM48S16030AT-G/F10 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 150 K |
| KM48S16030AT-G/F8 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 125 MHz(CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 150 K |
| KM48S16030AT-G/FA | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 133 MHz(CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 150 K |
| KM48S16030AT-G/FH | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 100 MHz(CL=2). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 150 K |
| KM48S16030AT-G/FL | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 100 MHz(CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 150 K |
| N80930AD | Universal serial bus microcontroller with burn-in. ROM size 0, RAM size 1 Kbyte, 6 or 12 MHz crystal operation | Intel-Corporation | PLCC | 68 | 0°C | 70°C | 283 K |
| N83930AD | Universal serial bus microcontroller with burn-in. ROM size 8 Kbytes, RAM size 1 Kbyte, 6 or 12 MHz crystal operation | Intel-Corporation | PLCC | 68 | 0°C | 70°C | 283 K |
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