| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR30AM | 30A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 88 K |
| M2S28D30ATP | 128M double data rate synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 66 | 0°C | 70°C | 1 M |
| M2V28S30ATP-6 | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S30ATP-6L | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S30ATP-7 | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S30ATP-7L | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S30ATP-8 | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V28S30ATP-8L | 128M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 626 K |
| M2V56S30ATP-7 | 256M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 619 K |
| MAX730AMJA | 5V, step-down, current-mode PWM DC-DC converter accept input between 5.5V and 11V and deliver 450mA for inputs above 6V. | Maxim-Integrated-Producs | CERDIP | 8 | -55°C | 125°C | 229 K |
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