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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2V64S30BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-764M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-864M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-8A64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S30BTP-8L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
R3131N30BC8-TRLow voltage detector with built-in delay circuit. Detector threshold 3.08V. )utput delay time 100ms. Output type CMOS. Detection mode H series output. Taping type TR.distributor-3-40°C85°C273 K
RN5RF30BA-TRLow ripple voltage regulator with external transistor. Output voltage 3.0V. Chip enable active type H. Standard taping type TRdistributor-5-40°C85°C134 K
RN5RF30BA-TRLow ripple voltage regulator with external transistor. Output voltage 3.0V. Chip enable active type H. Standard taping type TRdistributor-5-40°C85°C134 K
RN5RF30BCLow ripple voltage regulator with external transistor. Output voltage 3.0V. Chip enable active type H. Antistatic bagdistributor-5-40°C85°C134 K
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