Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416S8030BT-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM416S8030BT-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM416S8030BT-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM48S16030BT-G/F10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz(CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM48S16030BT-G/F8 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM48S16030BT-G/FA | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM48S16030BT-G/FH | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
KM48S16030BT-G/FL | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
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