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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C256K16F0-30JC5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C521 K
AS4C256K16F0-30JI5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ40-40°C85°C521 K
AT28BV16-30JI16K (2K x 8) battery-voltage CMOS EPPROMATMEL-Corporationplastic PLCC32-40°C85°C398 K
AT28BV64-30JC64K (8K x 8)battery-voltage CMOS EEPROM, 2.7V to 3.6V, 8mA active, 0.05mA standbyATMEL-Corporationplastic PLCC320°C70°C410 K
AT28BV64-30JI64K (8K x 8)battery-voltage CMOS EEPROM, 2.7V to 3.6V, 8mA active, 0.05mA standbyATMEL-Corporationplastic PLCC32-40°C85°C410 K
AT29BV010A-30JC1Megabit (128K x 8) single 2.7-volt battery-voltage CMOS flashATMEL-Corporationplastic PLCC320°C70°C490 K
AT29BV010A-30JI1Megabit (128K x 8) single 2.7-volt battery-voltage CMOS flashATMEL-Corporationplastic PLCC32-40°C85°C490 K
SML30J130300V Vdss N-Channel FET (field effect transistor)Semelab-Plc-SOT227---23 K
SML30J130F300V Vdss N-Channel+Fred FET (field effect transistor)Semelab-Plc-SOT227---23 K
SML30J70300V Vdss N-Channel FET (field effect transistor)Semelab-Plc-SOT227---23 K
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