| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB30N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 663 K |
| FQB30N06L | 60V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 630 K |
| MTB30N06VL | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 262 K |
| MTP30N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 207 K |
| RF1S30N06LE | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 91 K |
| RF1S30N06LESM | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 80 K |
| RF1S30N06LESM | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 80 K |
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 80 K |
| STP30N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
| STP30N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
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