| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FX30SMJ-3 | 150V p-channel MOSFET | distributor | - | - | - | - | 75 K |
| RC30S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 14 K |
| RC30S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S02 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 14 K |
| RC30S02G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S04 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 14 K |
| RC30S04G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S08G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S10G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| << [33] [34] [35] [36] [37] 38 [39] [40] |
|---|
