| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CT30VM-8 | 180A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 24 K |
| FS30VS-2 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30VS-3 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30VSJ-3 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
| FS30VSJ-3 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
| MGFK30V4045 | 14.0 - 14.5 GHz 1W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 80 K |
| SST30VR023-70-C-UH-R | 2 Mbit ROM SRAM | Silicon-Storage-Technology-Inc- | DIE | 32 | 0°C | 70°C | 111 K |
| SST30VR023-70-C-UN-R | 2 Mbit ROM SRAM | Silicon-Storage-Technology-Inc- | DIE | 32 | 0°C | 70°C | 111 K |
| SST30VR023-70-E-UH-R | 2 Mbit ROM SRAM | Silicon-Storage-Technology-Inc- | DIE | 32 | -20°C | 85°C | 111 K |
| SST30VR023-70-E-UH-R | 2 Mbit ROM SRAM | Silicon-Storage-Technology-Inc- | DIE | 32 | -20°C | 85°C | 111 K |
| SST30VR023-70-E-UN-R | 2 Mbit ROM SRAM | Silicon-Storage-Technology-Inc- | DIE | 32 | -20°C | 85°C | 111 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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