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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB314100BJ-50 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314100BJ-60 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314100BJ-70 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314100BJL-50 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314100BJL-60 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314100BJL-70 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314175BJL-60 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314400BJ-50 | 1M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 126 K |
| HYB314400BJ-60 | 1M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 126 K |
| HYB314405BJ-50 | 1M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
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