| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-32033-BLK | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 125 K |
| AT-32033-TR1 | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 125 K |
| GA3203 | Programmable DynamEQ III, (5.08 x 3.25 x 1.52mm) | Gennum-Corporation | Hybrid | 10 | -10°C | 40°C | 335 K |
| KM44S3203BT-G/F8 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/FA | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/FH | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KTC3203 | NPN transistor for high current applications | Korea-Electronics-Co--Ltd- | - | 3 | 0°C | 85°C | 277 K |
| MTSF3203R2 | TMOS single P-channel field effect transistor | Motorola | Micro | 8 | -55°C | 150°C | 134 K |
| PRN10320331/151G | Thin film differential terminator resistor network | California-Micro-Devices | SOIC | 20 | -55°C | 150°C | 79 K |
| PRN15320331/151G | Thin film differential terminator resistor network | California-Micro-Devices | DIP | 20 | -55°C | 150°C | 79 K |
| [1] 2 [3] [4] [5] [6] [7] [8] |
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